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| NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt ZTX614 C B E REFER TO BCX38 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 120 100 10 800 1.0 5.7 E-line TO92 Compatible VALUE UNIT V V V mA W mW/ C C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 120 100 10 100 100 1.25 1.8 5000 10000 TYP. MAX. UNIT V V V nA nA V V CONDITIONS. IC=10A, IE=0 IC=10mA, IB=0* IE=10A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VCE(sat) VBE(on) Static Forward Current hFE Transfer Ratio *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% 3-215 |
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